Photonic Development Platform

Advancing Terahertz Systems

Low-noise, highly stable terahertz sources based on lasers, and highly sensitive detectors enabled by photodiodes – compactly integrated on silicon chips: photonic technologies are key enablers of terahertz sensing.

With our photonic development platform, we conduct research and develop high-performance, compact, and application-oriented terahertz systems within a research-driven framework.

Optische Mikroskopaufnahme von CMOS-Schaltungen, über denen photonische Ringresonatoren angeordnet sind und die für Terahertzsensorik eingesetzt werden können. Optical microscope image of CMOS circuits with photonic ring resonators arranged above them, which can be used for terahertz sensing.

Photonics and electronics on a chip: Photonic ring resonators are arranged above the CMOS circuits. © Fraunhofer IMS

How You Benefit from Our Photonic Platform

Seamless monolithic integration of photonic and electronic components

CMOS- and post-CMOS-compatible processes for industry-oriented development

Rapid access to prototypes through proven Process Design Kits (PDKs)

High flexibility through individually adaptable processes
Innovation advantage enabled by state-of-the-art cleanroom and process infrastructure

Our Technologies at a Glance

Proprietary Process Design Kit (PDK) for demand-driven, efficient development of integrated photonic circuits (PICs)

Silicon nitride technology (SiN) as a key technology for photonic integrated circuits, due to high optical performance, low losses, CMOS compatibility, etc.

Standard building blocks for system design

CMOS- and post-CMOS-compatible processing

Precise, advanced fabrication technologies

Integration of photonic and electronic components, as well as combination with RFID technologies or MEMS to form hybrid systems

Test infrastructure

Our building blocks for system design

Couplers

Highly customizable waveguides for precise signal routing; including silicon nitride-based platforms with optimized transmission for visible wavelengths and thicknesses from 20–800 nm

Mach–Zehnder interferometers (MZI) for phase measurement and signal processing

Multimode interferometers (MMI) for robust signal splitting and combining

Ring resonators for filtering and sensing applications

Thermo-optic phase shifters for active control of the optical phase

highest precision

Our fabrication technologies

Deep-UV lithography for transferring fine structures down to 250 nm

CMOS-compatible photonic layer stacks for low-loss waveguides, precise phase control, and scalable integrated photonic devices

Post-CMOS processes enabling precise, low thermal-budget fabrication

Automated systems for 200 mm wafer processing enabling scalable and industry-oriented manufacturing

Versatile material integration for diverse photonic applications; waveguide planarization, particularly for integrating 2D materials to enhance device performance and functionality

Halterungen mit sehr feinen Nadeln zur Charakterisierung von Schaltkreisen der Terahertzsensorik befinden sich über einem Wafer unter dem Mikroskop. Probes with very fine needles for characterizing integrated circuits in terahertz sensing, positioned over a wafer under a microscope.

Laborant:in im Reinraumanzug untersucht Halbleiterwafer unter einem Mikroskop. Laboratory technician in a cleanroom suit examines a semiconductor wafer under a microscope.

Typical Applications

Our photonic platform enables solutions across a wide range of application areas:

High-frequency sensing with integrated photonic–electronic components

Communication technology for high-speed, energy-efficient data transmission

Precision measurement technology through photonics-assisted signal acquisition

Material analysis & imaging in the THz range

Integration into chip and system platforms for smart sensor networks

High-Performance CMOS Image Sensors

Our sensor technologies combine the high signal quality of established CCD sensors (charged-coupled devices) with the flexibility and performance of modern CMOS circuitry. This advanced integration reduces parasitic effects and enables enhanced signal processing in demanding applications. High-purity, low-defect silicon is used as the base material to minimize dark current. Optimized gate structures and deep channel implantations promote low-loss charge transport and high transfer efficiency.

CSPAD Bild Sensor des Fraunhofer IMS. CSPAD image sensor by Fraunhofer IMS.

LiDAR (Light Detection and Ranging), with its precise three-dimensional acquisition of environments and objects, is a key technology for advanced driver assistance systems, autonomous vehicles, and industrial robotics. For highly sensitive 3D imaging, we integrate CSPAD technology (CMOS single-photon avalanche diodes) into LiDAR systems for effective background light suppression, high resolution and reliable distance measurements. By combining these approaches with Photonic Integrated Circuits (PICs), we further enhance range and functionality.

3D-Bildsensor für Flash LIDAR Kamera-Systeme. 3D image sensor for flash LiDAR camera systems.

Our Project Approach

From Concept to Photonic Device

Concept & Design – Definition of requirements, simulation, and design of photonic structures

Processing & Prototyping – Cleanroom fabrication, initial prototypes, and test chips

Integration & Coupling – Combination with electronic components and packaging

Characterization & Optimization – Comprehensive measurement of electrical and optical properties

Pilot Series & Transfer – Provision for research partners or industrial projects

Start Your Project with Us

Our platform creates valuable synergies for the development of high-performance, miniaturized sensor components that can be flexibly deployed in both the optical and terahertz domains while complying with CMOS standards. Through these innovations, we contribute to advancing technologies in areas such as security and environmental monitoring – benefiting society while meeting industrial requirements.